| PART |
Description |
Maker |
| KM23C16000CET |
16M-Bit (2Mx8 /1Mx16)CMOS Mask ROM(16M(2Mx8 /1Mx16) CMOS掩膜ROM) 1,600位（2Mx8 / 1Mx16）的CMOS掩模ROM,600位（2Mx8 / 1Mx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| KM23V16005DG |
16M-Bit (2Mx8 /1Mx16) CMOS Mask ROM(16M2M×8/1M×16) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| LH28F160S3HB-L13 LH28F160S3R-L13 LH28F160S3HD-L13 |
EEPROM|FLASH|1MX16/2MX8|CMOS|BGA|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SDIP|64PIN|PLASTIC
EEPROM|FLASH|1MX16/2MX8|CMOS|SOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS |专科| 56PIN |塑料
EEPROM|FLASH|1MX16/2MX8|CMOS|TSSOP|56PIN|PLASTIC 的EEPROM | FLASH动画| 1MX16/2MX8 |的CMOS | TSSOP封装| 56PIN |塑料
|
Sharp, Corp.
M.S. Kennedy, Corp.
|
| MX29LV160ATTC-90G |
16M-BIT [2Mx8/1Mx16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 1M X 16 FLASH 3V PROM, 90 ns, PDSO48
|
Macronix International Co., Ltd.
|
| A82DL16X2T A82DL1622 A82DL1622TG-70 A82DL1622TG-70 |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash
|
AMICC[AMIC Technology]
|
| MX29LV017BTI-70G MX29LV017BTC-70G |
16M-BIT [2Mx8] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY 2M X 8 FLASH 3V PROM, 70 ns, PDSO40
|
Macronix International Co., Ltd.
|
| BS616LV161 BS616LV1613FC BS616LV1613FC-55 BS616LV1 |
Very Low Power/Voltage CMOS SRAM 1M X 16 bit
Asynchronous 16M(1Mx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
|
| AT49F1614 AT49F1604T-70CI AT49F1604T-70CC |
x16 Flash EEPROM
IC,EEPROM,NOR FLASH,1MX16/2MX8,CMOS,BGA,48PIN,PLASTIC
|
Atmel
|
| BS62LV1605FI BS62LV1605FC BS62LV1605EIP70 BS62LV16 |
From old datasheet system
Asynchronous 16M(2Mx8) bits Static RAM
Very Low Power/Voltage CMOS SRAM 2M X 8 bit 非常低功电压CMOS SRAM2米x 8
Very Low Power/Voltage CMOS SRAM 2M X 8 bit 非常低功电压CMOS SRAM米x 8
LM5080 Modular Current Sharing Controller; Package: MINI SOIC; No of Pins: 8 非常低功电压CMOS SRAM米x 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| A82DL1642 A82DL16X2T A82DL1622 A82DL1632 A82DL1632 |
Reed Switch; Pull-In Amp Turns Max:25; Pull-In Amp Turns Min:16; Circuitry:SPST-NO; Switching Current Max:1A; Switching Voltage Max:200VDC; Mounting Type:PCB; Body Length:13.5mm; Breakdown Voltage Min:250VDC
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM, A82DL16x2T(U) 16 Megabit (2Mx8 Bit/1Mx16 Bit) CMOS 3.3 Volt-only, Simultaneous Operation Flash 堆叠式多芯片封装（MCP）闪存和SRAM，A82DL16x2T（ü）16兆位Mx8 Bit/1Mx16位）的CMOS 3.3伏只，同时闪电行
|
AMIC Technology Corporation
AMIC Technology, Corp.
|
